STW47NM50(2004) データシートの表示（PDF） - STMicroelectronics
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STW47NM50 Datasheet PDF : 6 Pages
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STW47NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.3
Rthj-amb Thermal Resistance Junction-ambient
Max
30
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
20
A
EAS
Single Pulse Avalanche Energy
810
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
) ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
t(s OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
uc V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
500
V
d Breakdown Voltage
Pro t(s) IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C
10
µA
100
µA
lete uc IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30 V
±100
nA
bso Prod ON (1)
- O te Symbol
) le VGS(th)
t(s so RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS, ID = 250 µA
Static Drain-source On VGS = 10 V, ID = 22.5 A
Resistance
Min.
3
Typ.
Max.
Unit
4
5
V
0.065
0.085
Ω
roduc ) - Ob DYNAMIC
P t(s Symbol
te c gfs (1)
le du Ciss
so ro Coss
b P Crss
O lete Coss eq. (2)
ObsoRG
Parameter
Test Conditions
Forward Transconductance VDS > ID(on) x RDS(on)max,
ID = 22.5A
Input Capacitance
VDS= 25V, f= 1 MHz, VGS= 0
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Min.
Typ.
20
3700
610
50
325
1.7
Max.
Unit
S
pF
pF
pF
pF
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
2/6
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