STW47NM50(2004) データシートの表示（PDF） - STMicroelectronics

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STW47NM50
(Rev.:2004)

N-CHANNEL 550V @ Tjmax - 0.065Ω - 45A TO-247 MDmesh™ MOSFET

STMicroelectronics 

STW47NM50

N-CHANNEL 550V @ Tjmax - 0.065Ω - 45A TO-247

MDmesh™ MOSFET

ADVANCED DATA

TYPE

VDSS

(@Tjmax)

RDS(on) Rds(on)*Qg

ID

STW47NM50 550V < 0.085Ω 5.6 Ω*nC 45 A

TYPICAL RDS(on) = 0.065Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

t(s) 100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE

uc CHARGE

d LOW GATE INPUT RESISTANCE

ro ) TIGHT PROCESS CONTROL AND HIGH

P t(s MANUFACTURING YIELDS

lete uc DESCRIPTION

d The MDmesh™ is a new revolutionary MOSFET

so ro technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

b P layout. The resulting product has an outstanding low

- O te on-resistance, impressively high dv/dt and excellent

) le avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

t(s so dynamic performance that is significantly better than

c b that of similar competition’s products.

du O APPLICATIONS

ro ) - The MDmesh™ family is very suitable for increasing

P t(s power density of high voltage converters allowing

system miniaturization and higher efficiencies.

solete roduc ABSOLUTE MAXIMUM RATINGS

b P Symbol

Parameter

O te VGS

Gate- source Voltage

le ID

Drain Current (continuous) at TC = 25°C

oID

Drain Current (continuous) at TC = 100°C

bsIDM ( ) Drain Current (pulsed)

O PTOT

Total Dissipation at TC = 25°C

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

Value

Unit

±30

V

45

A

28.4

A

180

A

417

W

Derating Factor

2.08

W/°C

dv/dt (1) Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

–65 to 150

°C

150

°C

(•)Pulse width limited by safe operating area

(1) ISD ≤ 45A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

February 2004

1/6

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