R6020JNX データシートの表示（PDF） - ROHM Semiconductor
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R6020JNX Datasheet PDF : 15 Pages
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R6020JNX
Nch 600V 20A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-220FM
RDS(on)(Max.)
0.234Ω
ID
±20A
PD
76W
lFeatures
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
lInner circuit
lApplication
Switching applications
lPackaging specifications
Packing
Tube
Packing code
C7 G
Marking
R6020JNX
Basic ordering unit (pcs)
2000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
Continuous drain current (Tc = 25°C)
ID*1
±20
A
Pulsed drain current
IDP*2
±60
A
Gate - Source voltage
VGSS
±30
V
Avalanche current, single pulse
IAS*3
4.8
A
Avalanche energy, single pulse
EAS*3
618
mJ
Power dissipation (Tc = 25°C)
PD
76
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190111 - Rev.001
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