P4C1981-25JC データシートの表示（PDF） - Semiconductor Corporation

部品番号

コンポーネント説明

一致するリスト

P4C1981-25JC

ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS

Semiconductor Corporation 

P4C1981/1981L, P4C1982/1982L

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

ICC Dynamic Operating Current*

Temperature

Range

Commercial

Industrial

Military

–10 –12 –15 –20 –25 –35 –45 Unit

180 170 160 155 150 N/A N/A mA

N/A 180 170 160 155 150 N/A mA

N/A N/A 170 160 155 150 145 mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.

CE1 = VIL, CE2 = VIL, OE = VIH

DATA RETENTION CHARACTERISTICS (P4C1981L/P4C1982L Military Temperature Only)

Symbol

Parameter

VDR

ICCDR

VCC for Data Retention

Data Retention Current

Test Condition

Typ.*

Max

Min

VCC=

VCC=

Unit

2.0V 3.0V 2.0V 3.0V

2.0

V

10

15 600 900 µA

tCDR

Chip Deselect to

CE1 or CE2 ≥ VCC – 0.2V,

0

ns

Data Retention Time

VIN ≥ VCC – 0.2V or

tR†

Operation Recovery Time VIN ≤ 0.2V

tRC§

ns

*TA = +25°C

§tRC = Read Cycle Time

†This parameter is guaranteed but not tested.

DATA RETENTION WAVEFORM

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM ratingconditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with VIL and IIL not more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

Document # SRAM114 REV B

Page 3 of 13

Share Link: