IRFF9130 データシートの表示（PDF） - New Jersey Semiconductor
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IRFF9130 Datasheet PDF : 2 Pages
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IRFF9130, IRFF9131, IRFF9132, IRFF9133
Electrical Characteristics @TQ = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain - Source Breakdown Voltage
vGS(th) ^ate Threshold Voltage
•CSS Gate Source Leakage Forward
'CSS Gate ~ Source Leakage Reverse
'OSS
Zero ^ate Voltage Dram Current
!D(on) On-State Dram Current ®
RDS(on) Static Drain - Source On-State
Resistance @
9fs
Ciss
CQSS
Cfss
Td(on)
tr
tdtoffl
tf
Og
Forward Transconductance <^)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate- Source Plus Gate-Drain)
Type
IRFF9130
IRFF9132
IRFF9131
IRFF9133
ALL
ALL
ALL
Mm
100
-60
2.0
IRfF9130
IHFF9131
IRFF9132
IRFF9133
IRFF9130
IRFF9131
IRFF9132
IRFF9133
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
-6.S
-5.5
-
2.5
-
Typ.
-
-
-
0.25
0.30
3.5
500
300
10O
30
70
70
70
Max
-
-
40
-100
100
-250
1000
-
-
0.30
0.40
-
—
60
140
140
140
ALL
-
25
45
Units
V
V
V
nA
nA
fA
*A
A
A
n
0
S <!!>
pF
PF
pf
ns
ns
ns
ns
nC
VGS * ov
Test Conditions
lo - -250,-A
VDS :- VGS . ' D - -2SO..A
VGS -- 2°v
VGS -. 20V
VDS ; Max. Rating. VGS OV
VDS Max. Rating x 0.8. VGS
OV, Tc
125°C
VDS > 'Olonl * RDS[on) max - VGS ~ ' 10V
VGS
'v- 'D
VOS > 'Dion) * RDS(on) max <D - - 3 - O A
VGS " OV, VDS • 26V, 1 = 1 . 0 MHz
See Fig 1 0
VDD = 0.5 BVDSS. ID - 3 OA. Z0 501.'
SeeF.g, 17
(MOSFET switching times are essentially
independent of operating temperature.)
VGS a 15V- 'D = 15A- VDS 0.8V Max. Hating.
See Fig. 1 8 'or test circuit. (Gate charge is essentially
Qgs
Gate-Source Charge
ALL
13
23
nC
GWj
LQ
Gate-Drain {"Miller") Charge
Internal Drain Inductance
ALL
ALL
12
22
nC
50
nH
Measured from the
dram lead, 5mm
(0.2 in.T from header
to center of die.
Modified MOSFET
symbol showing the
internal device
inductances.
0
LS
Internal Source Inductance
ALL
15
nH
Measured from the
(0-2 in.) from header
to source bonding
pad.
/ il i \e lead, 5mm
N^ ^*£/
9
Thermal Resistance
R0jc
Htfj*
Junction-to-Case
Junction to-Ambient
ALL
All
-
b 0 •c/w
1/5
°C/W
Typica* socket mount
Source-Drain Diode Ratings and Characteristics
IS
Continuous Source Current
(Body DiodPl
'SM
Pulse Source Current
(Body Diode) (D
VSD
Diode Forward Voltage @
trr
QRR
'on
Reverse Recovery Time
Reverse Recovered Charge
Forward Turn on Time
IRFF9130
IRFF9131
IRFF9132
IRFF9133
IRFF9130
IRFF9131
IRFF9132
IRFF9133
IRFF9130
IRFF9131
IRFF9132
1RFF9133
ALL
ALL
ALL
-
65
A
-5.5
A
-
-26
A
-
-
-22
A
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.
l
i
1
oo-(lF^-TU*
<)
-
-
-1 5
V
Tc = 25°C, ls J 6.5A. VGS = OV
-
-
-1 5
V
TC - 25°C. IS = -5 5A. VGS = OV
300
-
ns
Tj * 150°C 1F = 6.5A. dlF/dt = 10OA/Ms
-
18
-
*c
Tj .150°C.lp 65A,dlF/dt = lOOA/^s
Intrinsic turn-on time is negligible Turn on speed is substantially controlled by LS + Lp.
O Tj = 25°Cto 150"C.
<2 Pulse Test: Pulse width S SOO^is,
Duty Cycle < 2%,
(S Repetitive Rating: Pulse width limited
by max junction temperature.
® Voo = 25V. starting Tj = 25°C. L 17.75 mH,
RG = 25O. Peak IL • 6.5A. (See Fig 15 and 16)
See Transient Thermal Impedance Curve (Fig. 5).
GQ JJ|"*^^ )
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