IRFF9130 データシートの表示（PDF） - New Jersey Semiconductor

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IRFF9130

Avalanche-Energy-Rated P-Channel Power MOSFETs

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

IRFF9130, IRFF9131

IRFF9132, IRFF9133

Avalanche-Energy-Rated

P-Channel Power MOSFETs

-5.5A and -6.5A, -60V and -100V

ros (on) = 0.30O and 0.40O

Features:

• Single pulse avalanche energy rated

• SOA is power-dissipation limited

• Nanosecond switching speeds

• Linear transfer characteristics

• High input impedance

The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are ad-

vanced power MOSFETs designed, tested, and guaranteed

to withstand a specified level of energy in the breakdown

avalanche mode of operation. These are p-channel enhance-

ment-mode silicon-gate power field-effect transistors de-

signed for applications such as switching regulators, switch-

ing converters, motor drivers, relay drivers, and drivers for

high-power bipolar switching transistors requiring high

speed and low gate-drive power. These types can be operated

directly from integrated circuits.

The IRFF-types are supplied in the JEDEC TO-205AF

(LOW-PROFILE TO-39) metal package.

TERMINAL DIAGRAM

D

«2CS-432««

P-CHANNEI. ENHANCEMENT MODE

TERMINAL DESIGNATION

JEDEC TO-205AF

Absolute Maximum Ratings

Parameter

Vps

Drain - Source Voltage (T)

VQGR

Drain - Gate Voltage (Rfjs = 20 kD) ©

'D @ TC = 25°C Continuous Drain Current

loud

Pulsed Drain Current (D

VQS

Gate - Source Voltage

PD @ TC " 25°C Max. Power Dissipation

Linear Derating Factor

t...

Single Pulse Avalanche Energy ®

Tj

Operating Junction and

Tsly

Storage Temperature Range

Lead Temperature

IHFF9130

-100

100

-6.5

26

IRFF9131

IRFF9132

60

-100

-60

100

-6.5

5.5

-26

22

±20

25 (See Fig. 141

0 2 (See Fig. 14!

500

IRFF9133

-60

60

-5.5

22

55 to 150

300 (0.063 in. (1 .6mm) from case for 10s!

Un.ls

V

V

A

A

V

W

w/°c

mj

°C

»C

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

\ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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