BSB012NE2LXI データシートの表示（PDF） - Infineon Technologies

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BSB012NE2LXI

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

OptiMOSTMPower-MOSFET,25V

BSB012NE2LXI

Table6Gatechargecharacteristics1)

Parameter

Symbol

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Gate charge total

Gate plateau voltage

Gate charge total

Gate charge total, sync. FET

Output charge

Qgs

Qg(th)

Qgd

Qsw

Qg

Vplateau

Qg

Qg(sync)

Qoss

Min.

-

-

-

-

-

-

-

-

-

Values

Typ. Max.

10.5 14

7.1 -

7.3 11

10.7 -

30 40

2.4 -

62 82

26 -

39 52

Unit Note/TestCondition

nC VDD=12V,ID=30A,VGS=0to4.5V

nC VDD=12V,ID=30A,VGS=0to4.5V

nC VDD=12V,ID=30A,VGS=0to4.5V

nC VDD=12V,ID=30A,VGS=0to4.5V

nC VDD=12V,ID=30A,VGS=0to4.5V

V VDD=12V,ID=30A,VGS=0to4.5V

nC VDD=12V,ID=30A,VGS=0to10V

nC VDS=0.1V,VGS=0to4.5V

nC VDD=12V,VGS=0V

Table7Reversediode

Parameter

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery charge

Symbol

IS

IS,pulse

VSD

Qrr

Min.

-

-

-

-

Values

Typ. Max.

-

57

-

227

0.56 -

5

-

Unit Note/TestCondition

A TC=25°C

A TC=25°C

V VGS=0V,IF=12A,Tj=25°C

nC VR=15V,IF=IS,diF/dt=400A/µs

1) See ″Gate charge waveforms″ for parameter definition

Final Data Sheet

6

Rev.2.1,2015-09-09

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