BSB012NE2LXI データシートの表示（PDF） - Infineon Technologies

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BSB012NE2LXI

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

OptiMOSTMPower-MOSFET,25V

BSB012NE2LXI

1Description

Features

•OptimizedSyncFETforhighperformanceBuckconverter

•IntegratedmonolithicSchottkylikediode

•Lowprofile(<0.7mm)

•100%avalanchetested

•100%RGTested

•Double-sidedcooling

•CompatiblewithDirectFET®packageMXfootprintandoutline1)

•QualifiedaccordingtoJEDEC2)fortargetapplications

•Pb-freeleadplating;RoHScompliant

CanPAKM-size

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

25

V

RDS(on),max

1.2

mΩ

ID

170

A

Qoss

39

nC

Qg(0V..10V)

62

nC

Gate

Source

Type/OrderingCode

BSB012NE2LXI

Package

MG-WDSON-2

Marking

05E2

RelatedLinks

-

1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered

trademark of International Rectifier Corporation.

2) J-STD20 and JESD22

Final Data Sheet

2

Rev.2.1,2015-09-09

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