STB15NM60ND データシートの表示（PDF） - STMicroelectronics

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STB15NM60ND

N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

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Electrical characteristics STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 300 V, ID = 7 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

Min Typ Max Unit

17

ns

20

ns

47

ns

28

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min Typ Max Unit

ISD

ISDM (1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 14 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =14 A, di/dt =100 A/µs,

VDD = 100 V

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VDD = 100 V

di/dt =100 A/µs, ISD = 14 A

Tj = 150 °C (see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

14 A

56 A

1.3 V

148

ns

910

nC

12

A

190

ns

1280

nC

13

A

6/19

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