STB15NM60ND データシートの表示（PDF） - STMicroelectronics

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STB15NM60ND

N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

STMicroelectronics 

STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

DPAK/I²PAK

TO-220/IPAK

TO-220FP

Unit

VDS

Drain-source voltage (VGS=0)

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

Drain current (continuous) at TC = 100 °C

IDM (2) Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

dv/dt (3) Peak diode recovery voltage slope

VISO

Tstg

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s;TC=25 °C)

Storage temperature

Tj

Operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 14 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

600

± 25

14

14 (1)

9

9(1)

56

56(1)

125

30

40

V

V

A

A

A

W

V/ns

--

2500

V

-55 to 150

°C

150

°C

Table 3. Thermal data

Symbol

Parameter

TO-220 I²PAK TO-247 D²PAK TO-220FP Unit

Rthj-case

Thermal resistance

junction-case max

1

Rthj-amb

Thermal resistance

junction-amb max

62.5

50

--

Rthj-pcb

Thermal resistance

junction-pcb max

--

--

--

30

Maximum lead

Tl

temperature for soldering

300

purposes

4.2

°C/W

62.5 °C/W

--

°C/W

°C

3/19

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