2N2919 データシートの表示（PDF） - Semicoa Semiconductor
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2N2919 Datasheet PDF : 2 Pages
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2N2919
Silicon NPN Transistor
ELECTRICAL CHARACTERISTICS
Data Sheet
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA
60
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 70 Volts
VCB = 45 Volts
VCB = 45 Volts, TA = 150°C
Collector-Emitter Cutoff Current
ICEO VCE = 5 Volts
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 6 Volts
VEB = 5 Volts
Volts
10
µA
2
nA
2.5
µA
2
nA
10
µA
2
nA
On Characteristics
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
DC Current Gain
hFE1
IC = 10 µA, VCE = 5 Volts
60
hFE2
IC = 100 µA, VCE = 5 Volts
100
hFE3
IC = 1 mA, VCE = 5 Volts
150
hFE4
IC = 10 µA, VCE = 5 Volts
20
TA = -55°C
hFE2-1/hFE2-2 IC = 100 µA, VCE = 5 Volts
0.9
Base-Emitter Voltage differential
|VBE1-VBE2|1
|VBE1-VBE2|2
|VBE1-VBE2|3
VCE = 5 Volts, IC = 10 µA
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 1 mA
Base-Emitter Voltage differential
at temperature
|VBE1-VBE2|1
|VBE1-VBE2|2
VCE = 5 Volts, IC = 100 µA
TA = 25 °C and -55°C
TA = 25 °C and +125°C
Base-Emitter Saturation Voltage
VBEsat1
IC = 1 mA, IB = 100 µA
0.5
Collector-Emitter Saturation
Voltage
VCEsat1
IC = 1 mA, IB = 100 µA
240
325
600
1.0
5
3
mVolts
5
0.8 mVolts
1
1.0
Volts
0.3
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE1|
VCE = 5 Volts, IC = 500 µA,
f = 20 MHz
3
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
150
Open Circuit Output Capacitance
COBO
VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Noise Figure
VCE = 5 Volts, IC = 10 µA,
Rg = 10 kΩ
NF1 f = 100 Hz
NF2 f = 1 kHz
NF3 f = 10 kHz
Short Circuit Input Impedance
hie
VCB =5V, IC =1mA, f =1kHz
3
Open Circuit Output Admittance
hoe
VCB =5V, IC =1mA, f =1kHz
Open Circuit reverse Voltage Transfer
Ratio
hre
VCB =5V, IC=100µA, f=1kHz
Typ
Max Units
20
600
5
pF
5
3
3
30
60
1x10-3
dB
kΩ
µmhos
Copyright 2002
Rev. H
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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