2N2919 データシートの表示（PDF） - Semicoa Semiconductor

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2N2919

Silicon NPN Transistor

Semicoa Semiconductor 

2N2919

Silicon NPN Transistor

Data Sheet

Description

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N2919J)

• JANTX level (2N2919JX)

• JANTXV level (2N2919JV)

• JANS level (2N2919JS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, TA = 25°C

Derate linearly above 25°C

Power Dissipation, TC = 25°C

Derate linearly above 25°C

Operating Junction Temperature

Storage Temperature

Symbol

VCEO

VCBO

VEBO

IC

PT

PT

TJ

TSTG

Applications

• General purpose

• Matched Dual transistors

• NPN silicon transistor

Features

• Hermetically sealed TO-78 metal can

• Also available in chip configuration

• Chip geometry 0307

• Reference document:

MIL-PRF-19500/355

Benefits

• Qualification Levels: JAN, JANTX,

JANTXV and JANS

• Radiation testing available

TC = 25°C unless otherwise specified

Rating

Unit

60

Volts

70

Volts

5

Volts

50

mA

300 one section

600 both sections

1.71one section

3.43 both sections

750 one section

1.5 both sections

4.286 one section

7.14 both sections

mW

mW/°C

MW

W

mW/°C

-65 to +200

°C

Copyright 2002

Rev. H

Semicoa Semiconductors, Inc.

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

www.SEMICOA.com

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