TK50P04M1 データシートの表示（PDF） - Toshiba
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TK50P04M1 Datasheet PDF : 9 Pages
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TK50P04M1
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
50
A
Drain current (pulsed)
(Note 1)
IDP
150
Power dissipation
(Tc = 25)
PD
60
W
Single-pulse avalanche energy
(Note 2)
EAS
65
mJ
Single-pulse avalanche current
IAS
50
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 32 V, Tch = 25 (initial), L = 20 µH, RG = 1.2 Ω, IAS = 50 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max
Unit
2.08
/W
125
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
2
2016-02-17
Rev.5.0
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