TK50P04M1 データシートの表示（PDF） - Toshiba

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TK50P04M1

MOSFETs Silicon N-Channel MOS (U-MOSVI-H)

Toshiba 

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TK50P04M1

1. Applications

• Switching Voltage Regulators

• Motor Drivers

• Power Management Switches

2. Features

(1) High-speed switching

(2) Low gate charge: QSW = 9.4 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

TK50P04M1

DPAK

1: Gate

2: Drain (heatsink)

3: Source

©2016 Toshiba Corporation

1

Start of commercial production

2009-02

2016-02-17

Rev.5.0

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