2N6648 データシートの表示（PDF） - Inchange Semiconductor
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2N6648 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
2N6648
DESCRIPTION
·With TO-3 packaging
·Built-in base-emitter shunt resistors
·Very high DC current gain
·Complement to type 2N6648
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Electronic ignition
·Alternator regulator
·Motor controls
·Power switching
·Hammer drivers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current
-0.25
A
PC
Collector Power Dissipation@TC=25℃ 100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.75
UNIT
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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