2N6648 データシートの表示（PDF） - Inchange Semiconductor

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2N6648

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlingtion Power Transistor

isc Product Specification

2N6648

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-50mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=- 5A; IB= -10mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA

VBE(on)-1 Base-Emitter On voltage

IC= -5A ; VCE= -3V

VBE(on)-2 Base-Emitter On voltage

IC= -10A ; VCE=- 3V

ICEO

Collector Cutoff current

VCE= -40V; IB= 0

IEBO

Emitter Cut-off current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -5A ; VCE= -3V

hFE-2

DC Current Gain

IC= -10A ; VCE= -3V

COB

Output Capacitance

IE= 0; VCB= -10V;ftest= 1.0MHz

MIN MAX UNIT

-40

V

-2.0

V

-3.0

V

-2.8

V

-4.5

V

-1.0

mA

10

mA

1000 20000

100

200

pF

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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