GN1A4Z データシートの表示（PDF） - NEC => Renesas Technology
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GN1A4Z Datasheet PDF : 4 Pages
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GNlA4Z
AdLib OCR Evaluation IVECFLECTRON DEVICE
TYPICAL CHARACTERISTICS IT, = 25 "C)
200
1801
3:
160
,9
0
140
9
120
100
(0L
80
60
40
20
TOTAL. POWER DISSIPATION vs .
AMBIENT TEMPERATURE
1
1 i i E I I,'-
1 1 ___
0
-20 0
20 40 60 80 100 120 140 160 180
Ta -Ambient Temperature -*C
COLLECTOR TO EMITTER VOLTAGE vs .
COLLECTOR CURRENT
-1 .0
to -0 .8
-2
0
-0 .6
LEd
-0 .4
o
-0.2
>
5V
Vin= -10 V
0
-10
-20
-30
-40
-50
IC-Collector Current --mA
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
-1 .0
>
In=10-IR
4)
C)
>
-0 .3
c0:
cn
-0 .1
8
U
-0 .03
Uj
illml 0
>
0 .011
-1.0
-3 .0
-10
-30
-100
IC-Collector Current-mA
2
COLLECTOR CURRENT vs .
COLLECTOR TO EMITTER VOLTAGE
P,
V)
40
-7-
-30
- 10 0 1 1A _
113 50 gA
-10
0
1000
-2 .0
-4 .0
-6 .0
-8 .0
VCE-Collector to Emitter Voltage-V
-10
DC CURRENT GAIN vs .
COLLECTOR CURRENT
VCE=-5 .OV
300
0
100
L)
Uj
U_
30
'0-'1 .0
_10i
-5
I
-3' .0 ' ' I I _-"10
I II
-30
IC-Collector Current-mA
I I 1 11
-100
INPUT VOLTAGE vs .
COLLECTOR CURRENT
j IJ
-2
0
>
-1 .0
00
-0 .5
-
>
-0 .2
-0-1
-1
-2
-5
-10 -20
-50 -100
IC-Collector Current-mA
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