GN1A4Z データシートの表示（PDF） - NEC => Renesas Technology
部品番号
コンポーネント説明
一致するリスト
GN1A4Z Datasheet PDF : 4 Pages
| |||
NEC
ELECTRON DEVICE
AdLib ODACTRA SEHvEaElTuation
SILICON TRANSISTOR
GN1A4Z
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
0
PACKAGE DIMENSIONS
in millimeters
2.1+0.1
1 .25±0.1
2
H
q
~.
C5
--+ 3
0
MC5,
1 Emitter
2 Base
3 Collector
FEATURES
0 Resistor Built-in TYPE
B
RI
Complementary to GA1A4Z
C
R1 = 10 kE2
E
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (Ta = 25 OC)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
VCBO
VCEO
VEBO
IC
Collector Current (Pulse)
IC
Maximum Power Dissipation
Total Power Dissipation
at 25 OC Ambient Temperature
PT
Maximum Temperatures
Junction Temperature
Tj
Storage Temperature Range
Tstg
-60
V
-50
V
-5
V
-100
mA
-200
mA
150
mw
150
0C
-55 to +150 0C
ELECTRICAL CHARACTERISTICS (T, 25 OC)
0,
CHARACTERISTIC
Collector Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Low-Level Input Voltage
High-Level Input Voltage
Input Resistor
Turn-on Time
Storage Time
Turn-off Time
SYMBOL
ICBO
hFE1
hFE2*
VCE(sat)
VIL*
VIH*
R1
ton
tstg
toff
* Pulsed : PIN ;~ 350 ps, Duty Cycle -~~ 2 %
MIN.
135
100
-2 .0
7 .0
TYP.
190
170
-0.07
-0.57
-0 .9
10
MAX .
-100
600
-0.2
-0 .5
13 .0
0.2
5 .0
6.0
UNIT
nA
V
V
V
kU
As
As
1
As
I
TEST CONDITIONS
VCB = -50 V, IE 0
VCE = -5.0 V, IC -5 .0 MA
VCE = -5,0 V, IC -50 MA
IC=-5.0mA,IB=-0 .25mA
VCE = -5.0 V, Ic = -100,uA
VCE = -0.2 V, IC = -5 .0 MA
VCC = -5 V, Vin = -5 V
RL= I kn
PW = 2 gs, Duty Cycle ~~ 2 %
hFE Classification
Marking
hFE1
M67
135 to 270
M68
200 to 400
1116~00
300K t6o9600]
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement.
@ NEC Corporation 1988
Share Link: 