BSP16T1 データシートの表示（PDF） - ON Semiconductor

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BSP16T1

SOT-223 Package High Voltage Transistor

ON Semiconductor 

BSP16T1

ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

ON CHARACTERISTICS

DC Current Gain

(VCE = –10 Vdc, IC = –50 mAdc)

hFE

30

Collector-Emitter Saturation Voltage

(IC = –50 mAdc, IB = –5.0 mAdc)

VCE(sat)

—

DYNAMIC CHARACTERISTICS

Current Gain – Bandwidth Product

(VCE = –10 Vdc, IC = –10 mAdc, f = 30 MHz)

fT

15

Collector–Base Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

Max

Unit

—

120

Vdc

–2.0

MHz

—

pF

15

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