BSP16T1 データシートの表示（PDF） - ON Semiconductor
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BSP16T1 Datasheet PDF : 8 Pages
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ON Semiconductort
SOT-223 Package
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Device Dissipation, TA = 25°C (1)
Storage Temperature Range
Junction Temperature
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
Tstg
TJ
Value
–300
–350
–6.0
–1000
–500
1.5
–65 to +150
150
Symbol
Max
RqJA
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Watts
°C
°C
Unit
°C/W
BSP16T1
ON Semiconductor Preferred Device
SOT–223 PACKAGE
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
COLLECTOR 2,4
BASE
1
EMITTER 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –50 mAdc, IB = 0, L = 25 mH)
V(BR)CEO
Vdc
–300
—
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Collector–Emitter Cutoff Current
(VCE = –250 Vdc, IB = 0)
Collector–Base Cutoff Current
(VCB = –280 Vdc, IE = 0)
Emitter–Base Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
V(BR)CBO
Vdc
–300
—
ICES
µAdc
—
–50
ICBO
µAdc
—
–1.0
IEBO
µAdc
—
–20
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 4
Publication Order Number:
BSP16T1/D
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