BAP50-03 データシートの表示（PDF） - NXP Semiconductors.
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BAP50-03 Datasheet PDF : 7 Pages
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NXP Semiconductors
BAP50-03
General purpose PIN diode
500
Cd
(fF)
400
300
mgs323
103
rD
(Ω)
102
mgs317
200
10
100
0
0
4
8
12
16
20
VR (V)
Fig 1.
f = 1 MHz; Tj = 25 °C.
Diode capacitance as a function of reverse
voltage; typical values
0
Lins
(dB)
−1
−2
mgs319
(1)
(2)
(3)
1
10−2
10−1
1
10
IF (mA)
Fig 2.
f = 100 MHz; Tj = 25 °C.
Diode forward resistance as a function of
forward current; typical values
0
ISL
(dB)
−5
mgs316
−10
−3
−15
−4
−20
−5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA
(2) IF = 1 mA
(3) IF = 0.5 mA
Tamb = 25 °C.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Fig 3. Insertion loss of the diode as a function of
frequency; typical values
−25
0.5
1
1.5
2
2.5
3
f (GHz)
Tamb = 25 °C.
Diode zero biased and inserted in series with a 50 Ω
stripline circuit.
Fig 4. Isolation of the diode as a function of
frequency; typical values
BAP50-03_4
Product data sheet
Rev. 04 — 11 September 2009
© NXP B.V. 2009. All rights reserved.
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