BCR3AM データシートの表示（PDF） - MITSUBISHI ELECTRIC
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BCR3AM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
102
7
5
3
2
PGM = 3W
101
7
5
3 VGT
2
PG(AV) = 0.3W
IGM =
0.5A
100
7
5
3
IRGT I
2
10–1
IFGT I, IRGT III VGD = 0.2V
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
5.0
4.5
4.0
360°
3.5 CONDUCTION
3.0 RESISTIVE,
INDUCTIVE
2.5 LOADS
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
IRGT III
3
2
102
IFGT I, IRGT I
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
102
7 JUNCTION TO AMBIENT
5
3
2
101
7 JUNCTION TO CASE
5
3
2
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
130
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
110
100
90
80
70
60 360°
CONDUCTION
50 RESISTIVE,
40 INDUCTIVE
LOADS
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
Feb.1999
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