BCR3AM データシートの表示（PDF） - MITSUBISHI ELECTRIC
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BCR3AM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Gate trigger voltage V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate trigger current V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case V4 V5
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
V5. The contact thermal resistance Rth (c-f) in case of greasing is 3°C/W.
V6. High sensitivity (IGT≤15mA) is also available. (IGT item 1)
Voltage
class
VDRM
(V)
(dv/dt) c
Min.
Unit
Test conditions
8
400
12
600
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
5
V/µs
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
Limits
Unit
Min. Typ. Max.
—
—
2.0
mA
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
—
—
30 V6 mA
—
—
30 V6 mA
—
—
30 V6 mA
0.2
—
—
V
—
—
10
°C/ W
V3
—
—
V/µs
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7 TC = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
40
35
30
25
20
15
10
5
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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