MMBT5550L データシートの表示（PDF） - ON Semiconductor
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MMBT5550L Datasheet PDF : 6 Pages
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500
300
200
100
50
30
20
10
7.0
5.0
0.1
TJ = 125°C
25°C
- 55°C
0.2 0.3
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
IC = 1.0 mA
0.01
0.02
10 mA
30 mA
0.05
0.1
0.2
0.5
1.0
2.0
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
VCE = 1.0 V
VCE = 5.0 V
20 30
50 70 100
100 mA
5.0
10
20
50
101
VCE = 30 V
100
0.30
IC/IB = 10
0.25
10-1
TJ = 125°C
IC = ICES
0.20
10-2
75°C
0.15
10-3
REVERSE
FORWARD
0.10
25°C
10-4
0.05
10-5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
0
0.0001
150°C
25°C
-55°C
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. VCE(sat)
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