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MMBT1010LT1 データシートの表示(PDF) - ON Semiconductor

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MMBT1010LT1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Low Saturation Voltage
PNP Silicon Driver Transistors
Part of the GreenLinePortfolio of devices with
energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve
energy in general purpose driver applications. This device is housed in
the SOT-23 and SC–59 packages which are designed for low power
surface mount applications.
Low VCE(sat), < 0.1 V at 50 mA
Applications
LCD Backlight Driver
Annunciator Driver
General Output Device Driver
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
DEVICE MARKING
MMBT1010LT1 = GLP
MSD1010T1 = GLP
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
45
15
5.0
100
THERMAL CHARACTERISTICS
Rating
Power Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
PD(1)
RθJA
TJ
Tstg
Max
250
1.8
556
150
–55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
°C
MMBT1010LT1
MSD1010T1
ON Semiconductor Preferred Devices
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 318–08, STYLE 6
SOT-23
3
2
1
CASE 318D–04, STYLE 1
SC-59
COLLECTOR
BASE
EMITTER
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 3
Publication Order Number:
MMBT1010LT1/D

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