BST82 データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
一致するリスト
BST82 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
ID = 10 µA; VGS = 0
Drain-source leakage current
VDS = 60 V; VGS = 0
Gate-source leakage current
VGS = 20 V; VDS = 0
Gate-source cut-off voltage
ID = 1 mA; VDS = VGS
Drain-source ON-resistance
ID = 150 mA; VGS = 5 V
Transfer admittance
ID = 175 mA; VDS = 5 V
Input capacitance at f = 1 MHz
VDS = 10 V; VGS = 0
Output capacitance at f = 1 MHz
VDS = 10 V; VGS = 0
Feedback capacitance at f = 1 MHz
VDS = 10 V; VGS = 0
Switching times (see Figs 2 and 3)
ID = 175 mA; VDD = 50 V; VGS = 0 to 10 V
Product specification
BST82
V(BR)DSS
IDSS
IGSS
V(P)GS
RDS(on)
Yfs
Ciss
Coss
Crss
ton
toff
min.
80 V
max. 1.0 µA
max.
min.
max.
100 nA
1.5 V
3.5 V
typ.
max.
7Ω
10 Ω
typ.
150 mS
typ.
max.
typ.
max.
15 pF
30 pF
13 pF
20 pF
typ.
max.
typ.
max.
typ.
max.
3 pF
6 pF
4 ns
10 ns
4 ns
10 ns
April 1995
4
Share Link: 