BST82 データシートの表示（PDF） - Philips Electronics

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BST82

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

Drain-source voltage (non-repetitive peak; tp ≤ 2 ms)

Gate-source voltage (open drain)

Drain current (DC)

Drain current (peak)

Total power dissipation up to Tamb = 25 °C (note 1)

Storage temperature range

Junction temperature

VDS

VDS(SM)

±VGSO

ID

IDM

Ptot

Tstg

Tj

THERMAL RESISTANCE

From junction to ambient (note 1)

Rth j-a

Note

1. Transistors mounted on a ceramic substrate of 7 mm x 5 mm x 0.7 mm.

Product specification

BST82

max.

80 V

max. 100 V

max.

20 V

max. 175 mA

max. 600 mA

max. 300 mW

−65 to + 150 °C

max. 150 °C

=

430 K/W

April 1995

3

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