P4C164LL データシートの表示（PDF） - Semiconductor Corporation
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P4C164LL Datasheet PDF : 10 Pages
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CAPACITANCES(4)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM
Test Conditions
VIN = 0V
VOUT = 0V
Max
Unit
7
pF
9
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
ICC
Parameter
Dynamic Operating Current
Temperature Range
-80
Com / Ind / Military
55
*
-90
-100
55
55
-120
Unit
55
mA
* Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously
enabled for writing, i.e. CE1 and WE ≤ VIL (max), OE is high. Switching inputs are 0V and 3V.
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Sym Parameter
-80
-90
-100
-120
Unit
Min Max Min Max Min Max Min Max
tRC Read Cycle Time
80
90
100
120
ns
tAA Address Access Time
80
90
100
120
ns
tAC Chip Enable Access Time
80
90
100
120
ns
tOH Output Hold from Address Change 10
10
10
10
ns
tLZ Chip Enable to Output in Low Z
10
10
10
10
ns
tHZ Chip Disable to Output in High Z
30
30
30
30
ns
tOE Output Enable Low to Data Valid
40
40
40
40
ns
tOLZ Output Enable Low to Low Z
5
5
5
5
ns
tOHZ Output Enable High to High Z
20
20
20
20
ns
tPU Chip Enable to Power Up Time
0
0
0
0
ns
tPD Chip Disable to Power Down Time
80
90
100
120
ns
Document # SRAM116 REV 04
Page 3
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