HMC262(2001) データシートの表示（PDF） - Hittite Microwave

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HMC262
(Rev.:2001)

GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz

Hittite Microwave 

MICROWAVE CORPORATION

HMC262

FEBRUARY 2001

HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz

V01.05.00

MIC Assembly Techniques for HMC262

1

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or

with conductive epoxy (see HMC general Handling, Mounting, Bond-

ing Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina

thin film substrates are recommended for bringing RF to and from the

chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates

must be used, the die should be raised 0.150mm (6 mils) so that the

surface of the die is coplanar with the surface of the substrate. One way

to accomplish this is to attach the 0.102mm (4 mil) thick die to a

0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is

then attached to the ground plane (Figure 2).

Microstrip substrates should brought as close to the die as possible in

order to minimize bond wire length. Typical die-to-substrate spacing

is 0.076mm (3 mils).

Figure 3: Typical HMC262 Assembly

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by

conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows

a typical assembly for the HMC262 MMIC chip.

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