HMC262(2001) データシートの表示（PDF） - Hittite Microwave

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HMC262
(Rev.:2001)

GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz

Hittite Microwave 

MICROWAVE CORPORATION

HMC262

HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz

V01.05.00

FEBRUARY 2001

Schematic

Vdd (+3V to +5V)

V1 V2 V3

RF IN

RF OUT

Ground

(Backside)

Absolute Maximum Ratings

Supply Voltage (Vdd)

(Vdd = V1 = V2 = V3)

+5.5 Vdc

Input Power (RFin) (Vdd = +3V)

-5 dBm

1

Channel Temperature (Tc)

175 °C

Thermal Resistance ( jc)

(Channel Backside)

90 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

NOTE: Connect V1, V2, & V3 to Vdd via a 100pF single layer chip bypass capacitor. Place the

capacitor no further than 0.762 mm (30mils) from the HMC262. M1 & M2 are to remain open circuit

(no connection).

Outline ( See Die Handling, Mounting, Bonding Note Page 1 - 13 )

RF IN

RF OUT

ALL DIMENSION IN MILLIMETERS (INCHES)

ALL TOLERANCES ARE ±0.025 (0.001)

DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND

BOND PADS ARE 0.100 (0.004) SQUARE

BOND PAD SPACING, CTR-CTR: 0.150 (0.006)

BACKSIDE METALLIZATION : GOLD

BOND PAD METALLIZATION : GOLD

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343

Fax: 978-250-3373

Web Site: www.hittite.com

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