CPV364M4KPBF データシートの表示（PDF） - International Rectifier

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CPV364M4KPBF

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

3000

2500

2000

1500

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

1000

500

0

1

Coes

Cres

10

100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

CPV364M4KPbF

20

VCC = 400V

I C = 13A

16

12

8

4

0

0

20

40

60

80

100 120

QG, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

1.5 VCC = 480V

V GE

TJ

=

=

15V

25 °

C

IC = 13A

1.0

10 RG = 1O0hΩm

VGE = 15V

VCC = 480V

1

IC = 26 A

IC = 13 A

IC = 6.5 A

0.5

0

10

20

30

40

50

RGRG, G, aGtaeteReRseissitsatnacnece(O( Ωhm))

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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