CPV364M4KPBF データシートの表示（PDF） - International Rectifier
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CPV364M4KPBF Datasheet PDF : 10 Pages
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CPV364M4KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltagee 600 ––– ––– V VGE = 0V, IC = 250μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.80 2.3
IC = 13A
VGE = 15V
––– 1.80 ––– V IC = 24A
See Fig. 2, 5
––– 1.56 1.73
IC = 13A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250μA
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 250μA
gfe
Forward Transconductance f
11 18 ––– S VCE = 100V, IC = 10A
ICES
Zero Gate Voltage Collector Current ––– ––– 250 μA VGE = 0V, VCE = 600V
––– ––– 3500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
––– 1.3 1.7 V IC = 15A
See Fig. 13
––– 1.2 1.6
IC = 15A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 110 170
— 14 21
IC = 13A
nC VCC = 400V See Fig.8
— 49 74
VGE = 15V
— 50 —
— 30 — ns TJ = 25°C
— 110 170
IC = 13A, VCC = 480V
— 91 140
VGE = 15V, RG = 10Ω
— 0.56 —
Energy losses include "tail"
— 0.28 — mJ and diode reverse recovery
— 0.84 1.1
See Fig. 9,10, 18
10 — —
μs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
— 47 —
— 30 —
— 250 —
— 150 —
TJ = 150°C, See Fig. 11,18
ns IC = 13A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
— 1.28 — mJ and diode reverse recovery
— 7.5 — nH Measured 5mm from package
— 1600 —
VGE = 0V
— 130 — pF VCC = 30V See Fig. 7
— 55 —
ƒ = 1.0MHz
— 42 60 ns TJ = 25°C See Fig.
— 74 120
TJ = 125°C 14
IF = 15A
— 4.0 6.0 A TJ = 25°C See Fig.
— 6.5 10
TJ = 125°C 15
VR = 200V
— 80 180 nC TJ = 25°C See Fig.
— 220 600
TJ = 125°C 16 di/dt = 200Aμs
— 188 — A/μs TJ = 25°C See Fig.
— 160 —
TJ = 125°C 17
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