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MTP36N06V データシートの表示(PDF) - ON Semiconductor

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MTP36N06V
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MTP36N06V Datasheet PDF : 8 Pages
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MTP36N06V
SAFE OPERATING AREA
1000 VGS = 20 V
SINGLE PULSE
TC = 25°C
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 µs
10
100 µs
1 ms
10 ms
1
0.1
1
dc
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
225
200
ID = 32 A
175
150
125
100
75
50
25
0
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.00
D = 0.5
0.2
0.1
0.10 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
1.0E-03
1.0E-02
t, TIME (s)
1.0E-01
Figure 13. Thermal Response
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
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