MTP36N06V データシートの表示（PDF） - ON Semiconductor

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MTP36N06V

Power MOSFET 32 Amps, 60 Volts

ON Semiconductor 

MTP36N06V

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

–

–

61

–

Vdc

–

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 °C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

µAdc

–

–

10

–

–

100

IGSS

–

–

100

nAdc

VGS(th)

2.0

2.6

4.0

Vdc

–

6.0

–

mV/°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 32 Adc)

(VGS = 10 Vdc, ID = 16 Adc, TJ = 150 °C)

Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 30 Vdc, ID = 32 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 32 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 32 Adc, VGS = 0 Vdc)

(IS = 32 Adc, VGS = 0 Vdc,

TJ = 150 °C)

Reverse Recovery Time

Reverse Recovery Stored

Charge

(IS = 32 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

–

0.034

0.04

Ohm

Vdc

–

1.25

1.54

–

–

1.47

5.0

7.83

–

mhos

–

1220

1700

pF

–

337

470

–

74.8

150

–

14

30

ns

–

138

270

–

54

100

–

91

180

–

39

50

nC

–

7.0

–

–

17

–

–

13

–

Vdc

–

1.03

2.0

–

0.94

–

–

92

–

ns

–

64

–

–

28

–

–

0.332

–

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

3.5

nH

–

4.5

–

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

nH

–

7.5

–

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