RL1201LGO-711 データシートの表示（PDF） - PerkinElmer Inc
部品番号
コンポーネント説明
一致するリスト
RL1201LGO-711 Datasheet PDF : 8 Pages
| |||
CMOS Spectroscopy Sensor
Sensor Characteristics
The L-series self-scanning photodiode
arrays are supplied in two versions to
meet broad application requirements.
The models with 25 µm diode spacing
are applied primarily where a compact
array is needed while the 50 µm mod-
els accommodate applications requir-
ing the highest dynamic range. Both
types are available in 128, 256 and 512
pixel lengths and the 25 µm models
also include a 1024 pixel version.
The simplified equivalent circuit of an
L-series sensor photodiode array is
shown in Figure 1. Each cell consists
of an active photodiode and a dummy
photodiode, both with an associated
junction capacitance. These diodes are
connected through MOS multiplex
switches to active and dummy video
lines. The shift register is driven by
complementary square wave clocks
with periodic start pulses being intro-
duced to initiate each scan. The pixel
sampling rate is determined by the
clock frequency. Integration time is the
interval between start pulses. The out-
put signal obtained from each scan of
an N-element array is a train of N
charge pulses, each proportional to the
light exposure on the corresponding
photodiode. In addition to the signal
charge, switching transients are capac-
itively coupled into the active video
lines by the multiplex switches.
Similar transients are introduced into
the dummy video lines and, therefore,
can be reduced by reading out the
video and dummy lines differentially.
In all models, the diodes are conti-
guous to collect the maximum amount
of incoming light. Charge generated by
light incident on the p-type surface
between two n-regions will divide
between the adjacent diodes to pro-
duce the response function shown in
Figure 2. The 6 µm interdiode gap is
maintained in all models to provide a
uniform aperture response function
across the product line.
The quantum efficiency of all models
is shown in Figure 3. The smooth
curve is the basic response of the pho-
todiode array showing a peak quantum
efficiency approximately 60% at 650 nm.
Figure 1. Equivalent Circuit
ø1
ø2
Start
Shift Register
Dummy
Photodiodes 1
2
Antiblooming
Gate
Active
Photodiodes
1
2
Antiblooming
Drain
n
CV
CV
n
End of Scan
Dummy Video
Reset Gate
Active Video
Reset Drain
VSS (Substrate)
Figure 2. Sensor Geometry and Aperture Response Function
N-1
N
N+1
2.5 mm
0.5 mm
A
B
C
Silicon Dioxide
N-Silicon
P-Silicon
C 25 µm 50 µm
A 19 µm 44 µm
B 6 µm 6 µm
100%
N-1
50%
Diode N
N+1
Position of Incident Light Spot
Figure 3. Quantum Efficiency
70
60
50
40
30
20
10
0
300 400 500 600 700 800 900 1000
Wavelength (nm)
Detail
Smooth
www.perkinelmer.com/opto
DSP-106.01C - 10/2001W Page 2
Share Link: 