STB120NF10 データシートの表示（PDF） - STMicroelectronics

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STB120NF10

N-channel 100 V, 0.009 Ω, 110 A STripFET™ II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP

STMicroelectronics 

STB/F/PW120NF10

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Electrical characteristics

Test conditions

VDD=50 V, ID= 60 A,

RG=4.7 Ω, VGS=10 V

(see Figure 15)

Min. Typ. Max. Unit

25

ns

90

ns

-

-

132

ns

68

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=120 A, VGS=0

ISD=120 A,

di/dt = 100 A/µs,

VDD=40 V, Tj=150 °C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

110 A

-

440 A

-

1.3 V

152

ns

- 760

nC

10

A

Doc ID 9522 Rev 7

5/21

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