STB120NF10 データシートの表示（PDF） - STMicroelectronics

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STB120NF10

N-channel 100 V, 0.009 Ω, 110 A STripFET™ II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB/F/PW120NF10

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating@125°C

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250 µA

2

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 60 A (1)

1. For TO-220FP ID = 40 A

Typ. Max. Unit

V

1

µA

10 µA

±100 nA

4

V

0.009 0.0105 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs (1) Forward transconductance VDS =25 V, ID = 60 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=80 V, ID = 120 A

VGS =10 V

(see Figure 16)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min.

-

Typ.

90

Max. Unit

S

5200

pF

-

785

pF

325

pF

172 233 nC

-

32

nC

64

nC

4/21

Doc ID 9522 Rev 7

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