NE68130-A データシートの表示（PDF） - California Eastern Laboratories.

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NE68130-A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

California Eastern Laboratories. 

INSERTION POWER GAIN

vs. FREQUENCY

25

VCE = 3 V

IC = 7 mA

20

15

10

5

0

0.1 0.2

0.5

1

2

5

Frequency f (GHz)

NOISE FIGURE vs.

COLLECTOR CURRENT

5

VCE = 3 V

f = 1 GHz

4

3

2

1

0

0.5 1

5 10

50

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

NE68130 / 2SC4227

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

15 VCE = 3 V

f = 1 GHz

10

5

0

0.5 1

5 10

50

Collector Current IC (mA)

4

Data Sheet PU10451EJ01V0DS

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