NE68130-A データシートの表示（PDF） - California Eastern Laboratories.

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NE68130-A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

California Eastern Laboratories. 

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

Reverse Transfer Capacitance

Symbol

Test Conditions

ICBO VCB = 10 V, IE = 0 mA

IEBO VEB = 1 V, IC = 0 mA

hFE Note 1 VCE = 3 V, IC = 7 mA

fT

VCE = 3 V, IC = 7 mA

⏐S21e⏐2 VCE = 3 V, IC = 7 mA, f = 1 GHz

NF VCE = 3 V, IC = 7 mA, f = 1 GHz

Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

R33

R33

40 to 90

R34

R34

70 to 150

R35

R35

110 to 240

NE68130 / 2SC4227

MIN. TYP. MAX. Unit

−

−

0.8

μA

−

−

0.8

μA

40

−

240

−

4.5

7.0

–

GHz

10

12

−

dB

−

1.4

2.7

dB

−

0.45

0.9

pF

2

Data Sheet PU10451EJ01V0DS

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