AUIR3330STRL データシートの表示（PDF） - International Rectifier

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AUIR3330STRL

PROTECTED HIGH FREQUENCY HIGH SIDE SWITCH

International Rectifier 

AUIR3330S

Static Electrical Characteristics

-40°C < Tj < 150°C, 6V < Vcc < 18V, (unless otherwise specified)

Symbol

Parameter

Min. Typ.

Rds on

ON state resistance Tj=25°C

ON state resistance Tj=150°C1



3

 5.5

Rds on Lv

ON state resistance low voltage

Tj=25°C



3

Vf Mos

Forward voltage of the Mosfet body

diode

0.6



Vbrk out

Breakdown voltage between Vcc

and Vout (MOSFET body diode)

39

40

I Vcc Slp

Supply current in sleep mode (IC +

MOSFET leakage)



1

I bias Boot

Bootstrap regulator biasing current

(flows through the output)



5.5

I Vcc Wke

Vcc current when the device is

woken up (IC + Ibias Boot)



14

V In Wke

Input threshold voltage to wake up

the device

0.35 0.75

V In Off

In voltage threshold to turn off

1.9 2.2

V In On

In voltage threshold to turn on

 2.8

V In Hyst

Input threshold hysteresis

0.4 

C In

Input pin capacitor

-

10

I In on

On state input current

10

20

I Bt Chrge

Bootstrap current charge

0.4 

V Bt Chrge

Bootstrap voltage

4.9 5.5

Max.

3.5

6.2

3.5

1.1



2

14

20

1.3



3.2

0.7

-

30

1.5

6.3

Guaranteed by design.

Units

m

m

V

V

µA

mA

mA

V

V

V

V

pF

µA

A

V

Test Conditions

Iout=30A

Iout=30A

Iout=15A Vcc=6V

Iout = -50A

Vin=0V Vcc = 14V

Tj = 25°C

Vout = 0V

I_boot = 0A Vout = 0V

Vin = 5V

Vout = 0V

Cboot =500nF

Cboot =500nF

4 www.irf.com © 2012 International Rectifier

May 29, 2014

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