ST1S12XX データシートの表示（PDF） - STMicroelectronics
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ST1S12XX Datasheet PDF : 20 Pages
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Electrical characteristics
ST1S12XX, ST1S12XX12, ST1S12XX18
VIN =VEN = 3.6 V, CIN = 4.7 µF, CO =10 µF, L = 2.2 µH, TJ = -40 to 125 °C (unless otherwise
specified. Typical values are referred to 25 °C).
Table 8.
Symbol
Electrical characteristics for ST1S12G18
Parameter
Test conditions
Min. Typ. Max. Unit
OUT
IO
VIN
Output feedback pin
VO pin bias current
Minimum input voltage
IQ
Quiescent current
IO
Output current
VEN Enable threshold
TJ =-40 to 125°C
IO= 10mA to 0.7A
VIN =VEN, VFB=2V
VEN = 0, TJ = -40°C to 85°C
VIN = 2.5V to 5.5V (1)
Device ON, VI = 2.5V to 5.5V
Device OFF
1.746 1.8 1.854
V
15 20
µA
2.5
V
500 650
µA
1
µA
0.7
A
1.5
V
0.5
IEN Enable pin current
%VO/ΔVIN Reference line regulation
%VO/ΔIO Reference load regulation
VIN = 2.5V to 5.5V (1)
IO = 10mA to 700mA (1)
PWMfS PWM switching frequency
RDSON-N NMOS switch on resistance ISW = 100mA
RDSON-P PMOS switch on resistance
ISWL Switching current limitation
ISW = 100mA
(1)
ν
Efficiency (1)
IO = 10mA to 100mA
IO = 100mA to 0.7A
TSHDN Thermal shutdown
THYS Thermal shutdown hysteresis
%VO/ΔIO Load transient response
IO = 100mA to 700mA, TA = 25°C
tR = tF ≥ 200ns, CO=22µF (1)
%VO/ΔIO
Short circuit removal response
IO = 10mA to IO = short,
TA = 25°C (1)
1
µA
1.16
0.05 0.1 %VO/ΔVIN
0.0025 0.005 %VO/mA
1.7 2.08 MHz
0.25 0.4
Ω
0.25 0.45
Ω
1.6
A
80
%
90
130 150
°C
15
°C
-5
+5
%VO
-10
+10 %VO
1. Guaranteed by design, but not tested in production.
8/20
Doc ID 14314 Rev 5
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