ST1S12XX データシートの表示（PDF） - STMicroelectronics

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ST1S12XX

Synchronous rectification with enable, 0.7 A, 1.7 MHz fixed or adjustable step-down switching regulator in TSOT23-5L

STMicroelectronics 

Electrical characteristics

4

Electrical characteristics

ST1S12XX, ST1S12XX12, ST1S12XX18

VIN = VEN = 3.6 V, CIN = 4.7 µF, CO = 10 µF, L = 2.2 µH, TJ = - 40 to 125 °C (unless

otherwise specified. Typical values are referred to 25 °C).

Table 6.

Symbol

Electrical characteristics for ST1S12G

Parameter

Test conditions

FB Feedback voltage

IFB

VFB pin bias current

VIN Minimum input voltage

IQ

Quiescent current

IO

Output current

VEN Enable threshold

TJ = -40 to 125°C

IO = 10mA to 0.7A

VIN = VEN, VFB = 0.65V

VEN = 0, TJ = -40°C to 85°C

VIN = 2.5V to 5.5 V (1)

Device ON, VIN = 2.5V to 5.5V

Device OFF

IEN Enable pin current

%VO/ΔVIN Reference line regulation

%VO/ΔIO Reference load regulation

VIN = 2.5V to 5.5V (1)

IO = 10 mA to 700mA (1)

PWMfS PWM switching frequency

DMAX Maximum duty cycle

RDSON-N NMOS switch on resistance ISW = 100mA

RDSON-P PMOS switch on resistance

ISWL Switching current limitation

ISW = 100mA

(1)

ν

Efficiency (1)

IO = 10mA to 100 mA, VO = 1.8V

IO = 100mA to 0.7A, VO = 1.8V

TSHDN Thermal shutdown

THYS Thermal shutdown hysteresis

%VO/ΔIO Load transient response

IO = 100mA to 700mA, TA = 25°C

tR = tF ≥ 200ns, CO=22µF (1)

%VO/ΔIO

Short circuit removal

response

IO = 10mA to IO= short,

TA = 25°C (1)

1. Guaranteed by design, but not tested in production.

Min. Typ. Max. Unit

582 600 618

mV

-50

50

nA

2.5

V

500 650

µA

1

µA

0.7

A

1.5

V

0.5

1

µA

1.16

0.05 0.1 %VO/ΔVIN

0.0025 0.005 %VO/mA

1.7 2.08 MHz

100

%

0.25 0.4

Ω

0.25 0.45

Ω

1.6

A

80

%

90

130 150

°C

15

°C

-5

+5

%VO

-10

+10 %VO

6/20

Doc ID 14314 Rev 5

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