BAV100 データシートの表示（PDF） - General Semiconductor

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BAV100

Small Signal Diodes

General Semiconductor 

BAV100 THRU BAV103

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Forward voltage at IF = 100 mA

VF

–

–

1

V

Leakage Current

at VR = 50 V

at VR = 50 V, Tj = 100 °C

at VR = 100 V

at VR = 100 V, Tj = 100 °C

at VR = 150 V

at VR = 150 V, Tj = 100 °C

at VR = 200 V

at VR = 200 V, Tj = 100 °C

BAV100 IR

BAV100 IR

BAV101 IR

BAV101 IR

BAV102 IR

BAV102 IR

BAV103 IR

BAV103 IR

–

–

100

nA

–

–

15

µA

–

–

100

nA

–

–

15

µA

–

–

100

nA

–

–

15

µA

–

–

100

nA

–

–

15

µA

Dynamic Forward Resistance

at IF = 10 mA

Capacitance

at VR = 0, f = 1 MHz

Reverse Recovery Time

from IF = 30 mA through IR = 30 mA to

IR = 3 mA; RL = 100 Ω

Thermal Resistance

Junction to Ambient Air

rf

–

Ctot

–

trr

–

RthJA

–

5

–

Ω

1.5

–

pF

–

50

ns

–

0.3751)

K/mW

1) Valid provided that electrodes are kept at ambient temperature.

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