BAV100 データシートの表示（PDF） - General Semiconductor
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BAV100 Datasheet PDF : 4 Pages
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BAV100 THRU BAV103
Small Signal Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
FEATURES
♦ Silicon Epitaxial Planar Diodes
♦ For general purpose
♦ These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
BAV100
VR
BAV101
VR
BAV102
VR
BAV103
VR
Forward DC Current at Tamb = 25 °C
IF
Rectified Current (Average)
I0
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f ≥ 50 Hz
Repetitive Peak Forward Current
at f ≥ 50 Hz, Θ = 180 °C, Tamb = 25 °C
Surge Forward Current at t < 1 s, Tj = 25 °C
IFRM
IFSM
Power Dissipation at Tamb = 25 °C
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
1) Valid provided that electrodes are kept at ambient temperature.
Value
Unit
60
V
120
V
200
V
250
V
2501)
mA
2001)
mA
6251)
mA
1
A
4001)
mW
175
°C
–65 to +175
°C
4/98
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