4MBI400VG-060R-50 データシートの表示（PDF） - Fuji Electric
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4MBI400VG-060R-50 Datasheet PDF : 10 Pages
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4MBI400VG-060R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Reverse bias safe operating area (max.)
VGE=15V, -VGE ≦ 15V, RG ≧ +10 / -39Ω, Tj ≦ 125°C (T1, T2)
T1, T2 (Terminal)
1000
800
600
400
RBSOA
(Repetitive pulse)
200
0
0
200
400
600
800
Collector-Emitter voltage : VCE [V]
[ SW mode C ]
Switching time vs. Collector current (typ.)
VCC=200V, VGE=±15V, RG=+10/-39Ω, Tj=125°C (T1, T2)
10000
toff
1000
ton
tr
tf
100
[ SW mode C ]
Switching time vs. Collector current (typ.)
VCC=200V, IC=400A, VGE=±15V, Tj=125°C
10000
toff
1000
100
ton
tr
tf
10
0
100 200 300 400 500 600 700
Collector current: IC [A]
[ SW mode C ]
Switching loss vs. gate resistance (typ.)
VCC=200V, IC=400A, VGE=±15V
100
10
1
10
100
Gate resistance : RG [Ω] (T1, T2)
[ SW mode C]
Switching loss vs. Collector current (typ.)
VCC=200V, VGE=±15V, RG=+10/-39Ω (T1, T2)
75
Eoff(125°C)
50
0
1
Eoff(125°C)
Eon(125°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
10 Err(25°C) 100
1000
Gate resistance : RG [Ω] (T1, T2)
50
Eoff(25°C)
Eon(125°C)
25
Eon(25°C)
Err(125°C)
0
Err(25°C)
0 100 200 300 400 500 600 700
Collector current: IC [A]
6
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