4MBI400VG-060R-50 データシートの表示（PDF） - Fuji Electric
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4MBI400VG-060R-50 Datasheet PDF : 10 Pages
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4MBI400VG-060R-50
Characteristics (Representative)
[ T1, T2 ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
800
VGE=20V
12V
700
600
15V
500
10V
400
300
200
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ T1, T2 ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
800
700
Tj=25°C
Tj=125°C
600
500
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ T1, T2 ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.0
Cies
10.0
1.0
Coes
Cres
0.1
0
10
20
30
Collector - Emitter voltage: VCE [V]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ T1, T2 ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
800
VGE=20V
15V
700
12V
600
500
10V
400
300
200
8V
100
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ T1, T2 ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
8
6
4
2
IC=800A
IC=400A
IC=200A
0
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
[ T1, T2 ]
Dynamic gate charge (typ.)
VCC=300V, IC=400A, Tj=25°C
20
400
15
VCE
10
VGE
200
5
0
0
-5
-10
-200
-15
-20
-400
-2500 -1500 -500 500 1500 2500
Gate charge: Qg [µC]
4
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