2SC3552 データシートの表示（PDF） - Inchange Semiconductor
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2SC3552 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3552
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 1.2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 0.8A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest=1.0MHz
IC= 0.8A ; VCE= 10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 8A , IB1= 1.6A; IB2= -3.2A
RL= 500Ω; VCC=400V
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
MIN TYP. MAX UNIT
800
V
7
V
1100
V
2.0
V
1.5
V
10 μA
10 μA
10
40
8
215
pF
15
MHz
0.5 μs
3.0 μs
0.3 μs
isc Website：www.iscsemi.cn
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