2SC3552 データシートの表示（PDF） - Inchange Semiconductor
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2SC3552 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3552
DESCRIPTION
·High Breakdown Voltage
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
30
A
IBB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
6
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
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