STF24N60M2 データシートの表示（PDF） - STMicroelectronics

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STF24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages

STMicroelectronics 

STF24N60M2, STFI24N60M2

Electrical characteristics

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Table 7. Switching times

Test conditions

VDD = 300 V, ID = 9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and 19)

Min. Typ. Max. Unit

- 14 - ns

-

9

- ns

- 60 - ns

- 15 - ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

ISD(1) Source-drain current

ISDM (1),(2) Source-drain current (pulsed)

VSD (3) Forward on voltage

ISD = 18 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 18 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 16)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 18 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16)

1. The value is rated according to Rthj-case and limited by package.

2. Pulse width limited by safe operating area

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

18 A

-

72 A

-

1.6 V

- 332

ns

-

4

µC

- 24

A

- 450

ns

- 5.5

µC

- 25

A

DocID024026 Rev 4

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