STF24N60M2 データシートの表示（PDF） - STMicroelectronics

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STF24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages

STMicroelectronics 

STF24N60M2, STFI24N60M2

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VGS

ID

ID

IDM (2)

PTOT

dv/dt (3)

dv/dt(4)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

Tstg Storage temperature

Tj

Max. operating junction temperature

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.

4. VDS ≤ 480 V

Value

± 25

18 (1)

12 (1)

72 (1)

30

15

50

2500

- 55 to 150

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Value

4.17

62.5

Table 4. Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetetive or not repetetive (pulse width

limited by Tjmax )

EAS

Single pulse avalanche energy (starting Tj=25°C, ID= IAR;

VDD=50)

Value

3.5

180

Unit

V

A

A

A

W

V/ns

V/ns

V

°C

Unit

°C/W

°C/W

Unit

A

mJ

DocID024026 Rev 4

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